CLOUD

SCOTTSDALE, AZ -- National Scientific Corporation (OTC Bulletin Board: NSCT) announced today that it has demonstrated tunneling effects in silicon-based diodes at National Microelectronics Research Centre (NMRC) labs in Ireland. National Scientific also announced its recent filing of a patent for a tunneling diode-based DRAM device. Graham Clark, Director of Global Sales and Marketing, said, "The recent results obtained from our short loop tunnel diode experiment show that the CMOS process we are developing for this technology is experimentally viable. We are continuing with our development program and hope to have a fully optimized process for the manufacture of tunnel diodes available later this year." Julie Donnelly, Central Fabrication Technology Manager of NMRC in Ireland, said, "The fabrication of NSC's tunneling diodes presented us with a unique set of technical challenges, and I am delighted that we were able to overcome so many of them to get these results." NSC's President, Michael Grollman, stated, "The tunnel diode is the most critical and by far the most challenging component of our TunnelMOS(TM) (or TMOS(TM)) SRAM memory cell and other memory applications. With this quantifiable data from NMRC in hand, we believe that we have a significantly compelling story to tell prospective development partners about our technology. While we have made major strides in the development of our technology there are still a number of significant challenges to be overcome before our TMOS(TM)technology will be fully demonstrated and ready for use in commercial applications." The Company also announced that it has completed a recent filing for a patent on a novel DRAM architecture using its tunnel diode technology called TDRAM(TM), co-invented by Mr. Graham Clark and Dr. El-Badawy El-Sharawy. Regarding this new patent, Mr. Clark said, "During the past months we have been in discussion with some key industry leaders discussing the needs of the marketplace for an ultra-dense, ultra-low-power memory product that will be required for applications in the later part of this decade. While our TMOS(TM) SRAM product offers considerable improvements over conventional SRAM, the DRAM market is by far the largest memory segment. By applying our technology to this architecture we believe we can provide a DRAM-based memory that does not require constant refresh and therefore has a significant power advantage over existing DRAM technologies, in both standalone and embedded applications. From a business point of view we now have significant activity in SRAM, DRAM and NVM (Non-Volatile Memory) memories." Mr. Grollman concluded by saying, "By listening to our customer needs and by applying our ADT designs to meet these needs, we are now moving into a very focused area of development and product application. We believe our memory technology can show some significant technical competitive advantage based on low-power consumption, chip scaling, and density for a variety of battery and main line applications. We also are pleased to announce the promotion of Mr. Graham Clark to Vice President of Technology Applications. This is a natural extension to his current role where he now has responsibility for bringing products out of the lab and into the marketplace. During the past months his contribution to the development of NSC's technology into specific applications has been vital to the company's progress. We are proud to have him on our team." For more information visit www.national-scientific.com