University of Konstanz's research team discovers magnetic phenomena in antiferromagnets that paves the way to developing faster storage

How do magnetic waves behave in antiferromagnets and how do they spread? What role do "domain walls" play in the process? And what could this mean for the future of data storage? These questions are the focus of a recent publication in the journal Physical Review Letters from an international research team led by Konstanz physicist Dr. Davide Bossini. The team reports on magnetic phenomena in antiferromagnets that can be induced by ultrafast (femtosecond) laser pulses and with the potential to endow the materials with new functionalities for energy-efficient and ultrafast data storage applications.

Demand for storage capacity is growing faster than the available infrastructure
The wildly increasing use of big data technologies and cloud-based data services means that the global demand for data storage is constantly expanding – along with the need for ever-faster data processing. At the same time, the currently available technologies will not be able to keep up forever. "The estimates say that the growing demand can only be met for a limited period of about 10 years, if no novel, more efficient technologies for data storage and processing can be developed in the meantime," says physicist Dr. Davide Bossini from the University of Konstanz in Germany and lead author of the study. Using femtosecond laser pulses, it is possible to induce magnetic waves (coherent spin waves) in an antiferromagnetic domain (above). The magnetic waves of adjacent domains are coupled with each other across domain walls at the ultrafast timescale (below). Copyright: Davide Bossini

To prevent a data crisis from taking place, it will not be enough to simply keep building more and more data centers, operating at the current state-of-the-art. The technologies of the future must also be faster and more energy-efficient than traditional mass data storage, based on magnetic hard disks. One class of materials, antiferromagnets, is a promising candidate for developing the next generation of information technology.

The structure of antiferromagnets
We are all familiar with household magnets made from iron or other ferromagnetic materials. These materials have atoms that are magnetically all oriented in the same direction – like small needles of a compass – so that a magnetic polarization (magnetization) occurs that affects the surrounding environment. The antiferromagnets, by contrast, have atoms with alternating magnetic moments that cancel each other out. Antiferromagnets thus have no net magnetization and therefore no magnetic impact on the surrounding environment.

On the inside, though, these antiferromagnetic bodies abundantly found in nature are split into many smaller areas called domains, where opposingly oriented magnetic moments are aligned in different directions. The domains are separated from each other by transitional areas known as "domain walls". "Although these transitional areas are well-known in antiferromagnets, until now, little was known about the influence the domain walls have on the magnetic properties of antiferromagnets – especially during extremely short time increments," says Dr. Bossini.

Femtosecond magnetic phenomena
In the current article, the researchers describe what happens when antiferromagnets (more specifically: crystals of nickel oxide) are exposed to ultrafast (femtosecond) laser pulses. The femtosecond scale is so short that even light can only move a very small distance in this period of time. In one quadrillionth of a second (one femtosecond), light travels a mere 0.3 micrometer – equivalent to the diameter of a small bacterium.

The international team of researchers showed that domain walls play an active role in the dynamic properties of the antiferromagnet nickel oxide. The experiments revealed that magnetic waves with different frequencies could be induced, amplified, and even coupled with each other across different domains – but only in the presence of domain walls. "Our observations show that the ubiquitous presence of domain walls in antiferromagnets could potentially be used to endow these materials with new functionalities at the ultrafast scale," Bossini explains.

Important steps towards more efficient data storage
The ability to couple different magnetic waves across domain walls highlights the potential to actively control the propagation of magnetic waves in time and space as well as energy transfer among individual waves at the femtosecond scale. This is a prerequisite for using these materials for the ultrafast storage and processing of data.

Such antiferromagnet-based data storage technologies would be several orders of magnitude faster and more energy-efficient than current ones. They would also be able to store and process a larger amount of data. Since the materials have no net magnetization, they would also be less vulnerable to malfunctions and external manipulation. "Future technologies based on antiferromagnets would thus meet all the requirements for the next generation of data-storage technology. They also have the potential to keep pace with the growing demand for data storage and processing capacity," concludes Bossini.

Tohoku University researchers build new ultrafast control scheme of ferromagnet for energy-efficient data storage

The digital data generated around the world every year is now counted in zettabytes, or trillions of billions of bytes - equivalent to delivering data for hundreds of millions of books every second. The amount of data generated continues to grow. If existing technologies remained constant, all the current global electricity consumption would be devoted to data storage by 2040.

Researchers at the Université de Lorraine in France and Tohoku University reported on an innovative technology that leads to a drastic reduction in energy for data storage.

The established technology utilizes an ultrafast laser pulse whose duration is as short as 30 femtoseconds - equal to 0.0000000000000003 seconds. The laser pulse is applied to a heterostructure consisting of ferrimagnetic GdFeCo, nonmagnetic Cu, and ferromagnetic Co/Pt layers. CAPTION A schematic illustration of the demonstrated ultrafast and energy efficient switching of ferromagnet driven by a single femtosecond laser pulse. The laser pulse demagnetizes the ferrimagnetic layer and generates a spin current, which travels through the nonmagnet and finally induces the switching of the ferromagnet. The lower image shows an observed magneto-optical Kerr effect micrograph showing the switching of the ferromagnetic layer.  CREDIT Shunsuke Fukami and Stéphane Mangin{module INSIDE STORY}

"Previous research, conducted by a subset of the current research group, observed magnetic switching of the ferromagnetic layer after the ferrimagnetic layer had been switched." This time, the researchers uncovered the mechanism accounting for this peculiar phenomenon and found that a flow of electron spin, referred to as a spin current, accompanying the switching of ferrimagnetic GeFeCo plays a crucial role in inducing the switching of ferromagnetic Co/Pt (Fig. 1).

Based on this insight, they demonstrated a much faster and less energy-consuming switching of the ferromagnet. This was driven by a single laser pulse without switching to the ferrimagnetic layer. "This is very good news for future data-storage applications as this technology can provide an efficient scheme to write digital information to a magnetic medium, which is currently based on a magnetic-field-induced switching," says Shunsuke Fukami, co-author of the study.

Multi-state data storage leaving binary behind

Stepping 'beyond binary' to store data in more than just 0s and 1s

Electronic data is being produced at a breath-taking rate.

The total amount of data stored in data centers around the globe is of the order of ten zettabytes (a zettabyte is a trillion gigabytes), and we estimate that amount doubles every couple of years.

With 8% of global electricity already being consumed in information and communication technology (ICT), low-energy data-storage is a key priority.

To date there is no clear winner in the race for next-generation memory that is non-volatile, has great endurance, highly energy-efficient, low cost, high density, and allows fast access operation. Computing consumes 8% of global electricity, largely in massive, factory-sized data centres. This already-unsustainable energy load that is doubling every decade.{module INSIDE STORY}

The joint international team comprehensively reviews 'multi-state memory' data storage, which steps 'beyond binary' to store more data than just 0s and 1s.

MULTI-STATE MEMORY: MORE THAN JUST ZEROES AND ONES

Multi-state memory is an extremely promising technology for future data storage, with the ability to store data in more than a single bit (ie, 0 or 1) allowing much higher storage density (amount of data stored per unit area.

This circumvents the plateauing of benefits historically offered by 'Moore's Law', where component size halved abut every two years. In recent years, the long-predicted plateauing of Moore's Law has been observed, with charge leakage and spiraling research and fabrication costs putting the nail in the Moore's Law coffin.

Non-volatile, multi-state memory (NMSM) offers energy efficiency, high, nonvolatility, fast access, and low cost.

Storage density is dramatically enhanced without scaling down the dimensions of the memory cell, making memory devices more efficient and less expensive.

NEUROMORPHIC COMPUTER MIMICKING THE HUMAN BRAIN

Multi-state memory also enables the proposed future technology neuromorphic computing, which would mirror the structure of the human brain. This radically-different, brain-inspired computing regime could potentially provide the economic impetus for the adoption of novel technology such as NMSM.

NMSMs allow analog calculation, which could be vital to intelligent, neuromorphic networks, as well as potentially helping us finally unravel the working mechanism of the human brain itself.

THE STUDY

The paper reviews device architectures, working mechanisms, material innovation, challenges, and recent progress for leading NMSM candidates, including:

  • Flash memory
  • magnetic random-access memory (MRAM)
  • resistive random-access memory (RRAM)
  • ferroelectric random-access memory (FeRAM)
  • phase-change memory (PCM)